Name: TSM060NB06LCZ-C0G
Brand: Taiwan Semiconductor Corporation
SKU: TSM060NB06LCZ C0G
Availability: InStock
Rating: 5 (170 reviews)

TSM060NB06LCZ-C0G

Per Riferimento Soltanto

Numero di parte	TSM060NB06LCZ-C0G
Produttore	Taiwan Semiconductor Corporation
Descrizione	60V, 111A, SINGLE N-CHANNEL POWE
Scheda dati
pacchetto	-
ECAD
A magazzino	11.985 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 17 - nov 22 (Scegli una spedizione rapida)
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Specifiche TSM060NB06LCZ-C0G

Produttore	Taiwan Semiconductor Corporation
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Corrente - Scarico continuo (Id) @ 25 ° C	13A (Ta), 111A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	6273 pF @ 30 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs	6mOhm @ 13A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-220
Pacchetto / caso	TO-220-3

TSM060NB06LCZ-C0G Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TSM060NB06LCZ-C0G.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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